Colloquia 2005

Carbon Nanotube Transistors

Prof. David Pulfrey
Gledden Senior Fellow, EECE Dept., UWA, Perth
On leave from ECE Dept., UBC, Vancouver, Canada

Date

4-5 p.m., Monday, 7 March, 2005

Location

School of Physics Common Room
Room 64 Old Main Building
The University of New South Wales


Abstract
Carbon nanotube field-effect transistors are attracting considerable attention, not only because of the interesting physics associated with transport and quantum phenomena in these one-dimensional systems, but also because of several properties that make them candidates to succeed ultimately scaled silicon CMOS. Examples of these superior properties are:
- cylindrical shape, allowing coaxial transistors with a wrap-around gate (the ultimate structure for reducing the short-channel effect);
- no dangling bonds, allowing good interfaces with high-permittivity dielectrics;
- low phonon scattering, allowing very high mobilities;
- semiconducting or metallic properties, allowing transistors and interconnects to be made from the same material;
- high electrical and thermal conductivity, allowing dense, high-current circuitry;
- compatibility with biological systems, allowing self-assembly by biological recognition.

These properties will be discussed in this talk. In addition, predictions for both the DC and AC performance of carbon nanotube field-effect transistors will be made on the basis of simulations from a self-consistent Schroedinger-Poisson solver. The effect on the capacitance and transconductance of resonance phenomena, due to bound states in different portions of the transistor, will be shown to be significant, and may offer a means of obtaining small-signal operation at terahertz frequencies.

The audience, including graduate students, are invited to meet the speaker 15 minutes beforehand over wine and cheese in the Physics Common Room.

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