Colloquia 2005
Carbon
Nanotube Transistors
Prof.
David Pulfrey
Gledden Senior Fellow, EECE Dept., UWA, Perth
On leave from ECE Dept., UBC, Vancouver, Canada
Date
4-5 p.m.,
Monday,
7 March, 2005
Location
School of Physics
Common Room
Room 64 Old Main Building
The University of New South Wales
Abstract
Carbon nanotube field-effect transistors are attracting considerable
attention, not only because of the interesting physics associated with
transport and quantum phenomena in these one-dimensional systems, but
also because of several properties that make them candidates to succeed
ultimately scaled silicon CMOS. Examples of these superior properties
are:
- cylindrical shape, allowing coaxial transistors with a wrap-around
gate (the ultimate structure for reducing the short-channel effect);
- no dangling bonds, allowing good interfaces with high-permittivity
dielectrics;
- low phonon scattering, allowing very high mobilities;
- semiconducting or metallic properties, allowing transistors and interconnects
to be made from the same material;
- high electrical and thermal conductivity, allowing dense, high-current
circuitry;
- compatibility with biological systems, allowing self-assembly by biological
recognition.
These properties will be discussed in this talk. In addition, predictions
for both the DC and AC performance of carbon nanotube field-effect transistors
will be made on the basis of simulations from a self-consistent Schroedinger-Poisson
solver. The effect on the capacitance and transconductance of resonance
phenomena, due to bound states in different portions of the transistor,
will be shown to be significant, and may offer a means of obtaining
small-signal operation at terahertz frequencies.
The audience,
including graduate students, are invited to meet the speaker 15 minutes
beforehand over wine and cheese in the Physics Common Room.
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